dual igbt nx-series module 200 amperes/1700 volts CM200DX-34SA 1 10/12 rev. 0 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com description: powerex igbt modules are designed for use in switching applications. each module consists of two igbt transistors in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: lo w drive power lo w v ce(sat) discrete super-fast recovery free-wheel diode isolat ed baseplate for easy heat sinking applications: a c motor control motion/ser vo control phot ovoltaic/fuel cell ordering information: example: select the complete module number you desire from the table below -i.e. CM200DX-34SA is a 1700v (v ces ), 200 ampere dual igbt power module. type current rating v ces amperes v olts (x 50) cm 200 34 outline drawing and circuit diagram dimensions inches millimeters aa 0.90.012 22.860.3 ab 0.22 dia. 5.5 dia. ac 1.970.02 50.00.5 ad 2.26 57.5 ae 0.15 3.75 af m6 m6 ag 0.28 7.0 ah 0.14 3.5 aj 0.03 0.8 ak 0.81 20.5 al 0.70 17.0 am 0.12 3.0 an 0.65 16.5 ap 0.49 12.5 aq 0.18 4.5 ar 0.102 dia. 2.6 dia. as 0.089 dia. 2.25 dia. at 0.05 1 .2 au 0.03 0.65 av 0.05 1 .15 aw 0.54 13.7 ax 0.52 13.0 ay 0.285 7.25 g2(8) tr 2 tr 1 di2 di1 es2(9) e2 (10) c1 (11) c2e1 (7) c2e1 (6) th th1 (1) th2 (2) g1(3) cs1(5) es1(4) ntc a d e f j ar z aa ay b ah aj y al am am ak ag ae ad ac as an aq aq ag at k aw ax aw ae 45 au av ap g l h p c x t s r r q n v u w ab (4 places) af (4 places) m k y y y detail "b" detail "b" detail "c" detail "a" detail "c" detail "a" 1 2 3 4 5 6 7 8 9 10 11 tolerance otherwise specified (mm) the tolerance of size between terminals is assumed to 0.4 division of dimension tolerance 0.5 to 3 0.2 over 3 to 6 0.3 over 6 to 30 0.5 over 30 to 120 0.8 over 120 to 400 1. 2 dimensions inches millimeters a 5.98 152.0 b 2.44 62.0 c 0.67+0.04/-0.02 17.0+1.0/-0.5 d 5.39 137.0 e 4.79 121.7 f 4.330.02 110.00.5 g 3.72 94.5 h 0.60 15.14 j 0.53 13.5 k 0.31 7.75 l 1.330.012 33.910.3 m 2.28 0.012 57.95 0.3 n 1.54 39.0 p 0.87 22.0 q 0.017 0.012 0.450.3 r 0.55 14.0 s 0.47 12.0 t 0.24 6.0 u 0.31 8.0 v 0.26 6.5 w 0.62 15.64 x 0.28 0.012 7.24 0.3 y 0.15 3.81 z 1.95 0.012 49.530.3
CM200DX-34SA dual igbt nx-series module 200 amperes/1700 volts 2 10/12 rev. 0 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com absolute maximum ratings, t j = 25c unless otherwise specifed inverter part igbt/fwdi characteristics symbol rating units collector-emitter voltage (v ge = 0v) v ces 1700 volts gate-emitter voltage (v ce = 0v) v ges 20 volts collector current (dc, t c = 125c) *2,*4 i c 200 amperes collector current (pulse, repetitive) *3 i crm 400 amperes total power dissipation (t c = 25c) *2,*4 p tot 2000 watts emitter current (t c = 25c) *2,*4 i e *1 200 amperes emitter current (pulse, repetitive) *3 i erm *1 400 amperes maximum junction temperature t j(max) 175 c module characteristics symbol rating units maximum case temperature *2 t c(max) 125 c operating junction temperature t j(op) -40 to +150 c storage temperature t stg -40 to +125 c isolation voltage (terminals to baseplate, rms, f = 60hz, ac 1 minute) v iso 4000 volts *1 represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *2 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. *3 pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. *4 junction temperature (t j ) should not increase beyond maximum junction temperature (t j(max) ) rating. 21.9 0 tr1, tr2: igbt, di1, di2: fwdi, th: ntc thermistor each mark points to the center position of each chip. th 0 32.8 42.0 44.8 75.8 88.3 tr 2 22.4 30.0 34.5 42.4 di2 tr 2 di2 tr 1 tr 1 di1 di1 label side
CM200DX-34SA dual igbt nx-series module 200 amperes/1700 volts 3 10/12 rev. 0 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com electrical characteristics, t j = 25c unless otherwise specifed inverter part igbt/fwdi characteristics symbol test conditions min. typ. max. units collector-emitter cutoff current i ces v ce = v ces , v ge = 0v 1 ma gate-emitter leakage current i ges v ge = v ges , v ce = 0v 0.5 a gate-emitter threshold voltage v ge(th) i c = 20ma, v ce = 10v 5.4 6 6.6 volts collector-emitter saturation voltage v ce(sat) i c = 200a, v ge = 15v, t j = 25c *6 2.0 2.5 volts (terminal) i c = 200a, v ge = 15v, t j = 125c *6 2.2 volts i c = 200a, v ge = 15v, t j = 150c *6 2.25 volts collector-emitter saturation voltage v ce(sat) i c = 200a, v ge = 15v, t j = 25c *6 1.9 2.4 volts (chip) i c = 200a, v ge = 15v, t j = 125c *6 2.1 volts i c = 200a, v ge = 15v, t j = 150c *6 2.15 volts input capacitance c ies 35 nf output capacitance c oes v ce = 10v, v ge = 0v 1.5 nf reverse transfer capacitance c res 0.35 nf gate charge q g v cc = 1000v, i c = 200a, v ge = 15v 1100 nc turn-on delay time t d(on) 400 ns rise time t r v cc = 1000v, i c = 200a, v ge = 15v, 100 ns turn-off delay time t d(off) r g = 0?, inductive load 700 ns fall time t f 600 ns emitter-collector voltage v ec *1 i e = 200a, v ge = 0v, t j = 25c *6 4.1 5.3 volts (terminal) i e = 200a, v ge = 0v, t j = 125c *6 2.9 volts i e = 200a, v ge = 0v, t j = 150c *6 2.7 volts emitter-collector voltage v ec *1 i e = 200a, v ge = 0v, t j = 25c *6 4.0 5.2 volts (chip) i e = 200a, v ge = 0v, t j = 125c *6 2.8 volts i e = 200a, v ge = 0v, t j = 150c *6 2.6 volts reverse recovery time t rr *1 v cc = 1000v, i e = 200a, v ge = 15v 300 ns reverse recovery charge q rr *1 r g = 0?, inductive load 8.0 c turn-on switching energy per pulse e on v cc = 1000v, i c = i e = 200a, 28 mj turn-off switching energy per pulse e off v ge = 15v, r g = 0?, 52 mj reverse recovery energy per pulse e rr *1 t j = 150c, inductive load 42 mj internal lead resistance r cc' + ee' main terminals-chip, 2.0 m? per switch,t c = 25c *2 internal gate resistance r g per switch 2.5 ? *1 represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *2 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. *6 pulse width and repetition rate should be such as to cause negligible temperature rise. 21.9 0 tr1, tr2: igbt, di1, di2: fwdi, th: ntc thermistor each mark points to the center position of each chip. th 0 32.8 42.0 44.8 75.8 88.3 tr 2 22.4 30.0 34.5 42.4 di2 tr 2 di2 tr 1 tr 1 di1 di1 label side
CM200DX-34SA dual igbt nx-series module 200 amperes/1700 volts 4 10/12 rev. 0 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com electrical characteristics, t j = 25c unless otherwise specifed (continued) ntc thermistor part characteristics symbol test conditions min. typ. max. units zero power resistance r 25 t c = 25c *2 4.85 5.00 5.15 k? deviation of resistance ? r/r t c = 100c, r 100 = 493? -7.3 +7.8 % b constant b (25/50) approximate by equation *7 3375 k power dissipation p 25 t c = 25c *2 10 mw thermal resistance characteristics thermal resistance, junction to case *2 r th(j-c) q per inverter igbt 0.075 k/w thermal resistance, junction to case *2 r th(j-c) d per inverter fwdi 0.12 k/w contact thermal resistance, r th(c-f) thermal grease applied 15 k/kw case to heatsink *2 (per 1 module) *8 mechanical characteristics mounting torque m t mounting to heatsink , m5 screw 22 27 31 in-lb m s mounting to heatsink, m5 screw 22 27 31 in-lb creepage distance d s terminal to terminal 17.0 mm terminal to baseplate 16.8 mm clearance d a terminal to terminal 10.0 mm terminal to baseplate 10.0 mm weight m 350 grams flatness of baseplate e c on centerline x, y *5 0 + 100 m recommended operating conditons, t a = 25c (dc) supply voltage v cc applied across c1-e2 1000 1200 volts gate (-emitter drive) voltage v ge(on) applied across g1-es1 / g2-es2 13.5 15.0 16.5 volts external gate resistance r g per switch 0 35 ? *2 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. *5 baseplate (mounting side) flatness measurement points (x, y) are shown in the figure below. *7 b (25/50) = in( r 25 )/( 1 C 1 ) r 50 t 25 t 50 r 25 ; resistance at absolute temperature t 25 [k]; t 25 = 25 [c] + 273.15 = 298.15 [k] r 50 ; resistance at absolute temperature t 50 [k]; t 50 = 50 [c] + 273.15 = 323.15 [k] *8 typical value is measured by using thermally conductive grease of = 0.9 [w/(m ? k)]. 21.9 0 tr1, tr2: igbt, di1, di2: fwdi, th: ntc thermistor each mark points to the center position of each chip. th 0 32.8 42.0 44.8 75.8 88.3 tr 2 22.4 30.0 34.5 42.4 di2 tr 2 di2 tr 1 tr 1 di1 di1 label side ? : concave + : convex ? : concave x y + : convex mounting side mounting side mounting side
CM200DX-34SA dual igbt nx-series module 200 amperes/1700 volts 5 10/12 rev. 0 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 0 2 1 5 3 4 6 10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (chip - typical) 10 2 10 3 emitter current, i e , (amperes) gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (chip - typical) 10 6 8 10 14 12 16 18 20 8 6 4 2 0 t j = 25c i c = 400a i c = 200a i c = 120a collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (chip - typical) 0 2 4 6 8 10 0 v ge = 20v 10 11 15 9 8 t j = 25 c 400 300 100 200 collector current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (chip - typical) 4.5 3.5 2.5 3.0 4.0 0 2.0 1.5 0.5 1.0 0 400 300 100 200 v ge = 15v t j = 25c t j = 125c t j = 150c t j = 25c t j = 125c t j = 150c
CM200DX-34SA dual igbt nx-series module 200 amperes/1700 volts 6 10/12 rev. 0 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 0 10 2 10 3 10 2 10 1 10 -1 10 0 10 1 v ge = 0v c ies c oes c res 10 -1 collector current, i c , (amperes) 10 4 10 3 10 1 10 2 10 2 10 0 10 1 10 4 10 3 10 2 10 0 10 1 switching time, (ns) half-bridge switching characteristics (typical) t d(off) t d(on) t r v cc = 1000v v ge = 15v r g = 1.3 t j = 125c inductive load t f 10 3 collector current, i c , (amperes) 10 1 10 2 half-bridge switching characteristics (typical) t d(off) t d(on) t r v cc = 1000v v ge = 15v r g = 1.3 t j = 150c inductive load t f 10 3 external gate resistance, r g , ( ) 10 4 10 3 10 1 10 -1 10 1 10 2 switching time, (ns) switching time, (ns) switching time vs. gate resistance (typical) t d(off) t d(on) t r v cc = 1000v v ge = 15v i c = 200a t j = 125c inductive load t f 10 2 10 0
CM200DX-34SA dual igbt nx-series module 200 amperes/1700 volts 7 10/12 rev. 0 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 10 4 10 3 10 1 10 2 v cc = 1000v v ge = 15v i c = 200a t j = 150c inductive load external gate resistance, r g , ( ) 10 1 10 -1 10 0 switching time, (ns) switching time vs. gate resistance (typical) 10 2 t d(off) t d(on) t r t f gate charge (x 100), q g , (nc) gate-emitter voltage, v ge , (volts) gate charge vs. v ge 20 0 15 10 5 0 2 4 6 8 10 12 18 16 14 i c = 200a v cc = 1000v emitter current, i e , (amperes) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 2 10 1 10 3 v cc = 1000v v ge = 15v r g = 0 t j = 125c inductive load i rr t rr reverse recovery, i rr (a), t rr (ns) emitter current, i e , (amperes) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 2 10 1 10 3 v cc = 1000v v ge = 15v r g = 0 t j = 150c inductive load i rr t rr reverse recovery, i rr (a), t rr (ns)
CM200DX-34SA dual igbt nx-series module 200 amperes/1700 volts 8 10/12 rev. 0 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com gate resistance, r g , ( ) switching energy, e on , e off , (mj) reverse recivery energy, e rr , (mj) 10 -1 10 0 10 1 10 2 half-bridge switching characteristics (typical) v cc = 1000v v ge = 15v r g = 0 t j = 125c v cc = 1000v v ge = 15v r g = 0 t j = 150c v cc = 1000v v ge = 15v i c = 200a t j = 125c collector current, i c , (amperes) emitter current, i e , (amperes) switching energy, e on , e off , (mj) switching energy, e on , e off , (mj) reverse recivery energy, e rr , (mj) 10 3 10 2 10 1 10 0 10 3 10 2 10 1 10 0 10 3 10 2 10 1 10 0 10 3 10 2 10 1 10 0 10 2 10 1 10 -1 10 0 10 2 10 1 10 -1 10 0 reverse recivery energy, e rr , (mj) half-bridge switching characteristics (typical) collector current, i c , (amperes) emitter current, i e , (amperes) 10 1 10 2 10 3 half-bridge switching characteristics (typical) e on e off e rr e on e off e rr e on e off e rr gate resistance, r g , ( ) switching energy, e on , e off , (mj) reverse recivery energy, e rr , (mj) 10 -1 10 0 10 1 10 2 v cc = 1000v v ge = 15v i c = 200a t j = 150c e on e off e rr 10 1 10 2 10 3 half-bridge switching characteristics (typical)
CM200DX-34SA dual igbt nx-series module 200 amperes/1700 volts 9 10/12 rev. 0 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com time, (s) transient thermal impedance characteristics (maximum) 10 0 10 -5 10 -4 10 -3 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 z th = r th ? (normalized value) single pulse t c = 25c per unit base = r th(j-c) = 0.075 k/w (igbt) r th(j-c) = 0.12 k/w (fwdi) normalized transient thermal impedance, z th(j-c')
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